S.No.
n-type semiconductor
p-type semiconductor
1.
N-type semiconductor is obtained by doping an intrinsic semiconductor with pentavalent impurity.
P-type semiconductor is obtained by doing an intrinsic semiconductor with a trivalent impurity.
2.
Here electrons are majority carriers and holes are minority carriers.
Here holes are majority carriers and electrons are minority carriers.
3.
It has donar energy levels very close to conduction band.
It has acceptor energy levels very close to valence band.
4.
When temperatre is increased, these semiconductors can easily donate an electron from donor energy level to the conduction band.
When temperature is increased, these semiconductors can easily accept an electron from valence band to acceptor energy level.
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