| S.No. |
n-type semiconductor |
p-type semiconductor |
| 1. |
N-type semiconductor is obtained by doping an intrinsic semiconductor with pentavalent impurity. |
P-type semiconductor is obtained by doing an intrinsic semiconductor with a trivalent impurity. |
| 2. |
Here electrons are majority carriers and holes are minority carriers. |
Here holes are majority carriers and electrons are minority carriers. |
| 3. |
It has donar energy levels very close to conduction band. |
It has acceptor energy levels very close to valence band. |
| 4. |
When temperatre is increased, these semiconductors can easily donate an electron from donor energy level to the conduction band. |
When temperature is increased, these semiconductors can easily accept an electron from valence band to acceptor energy level. |
