Typical BJT Characteristics and Maximum Ratings

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Table summarises the characteristics of some typical bipolar junction transistors for different applications, where IC max is the maximum collector current, VCE  max is the maximum collector – mitter voltage, PTOT max is the maximum device power dissipation, and hfe is the typical value of common-emitter current gain.

Transistor characteristics and maximum ratings

Device
Type
IC max
VCE max
PTOT max
hfe typical
Application
BC108 n-p-n 100 mA 20V 300 mW 125 General-purpose small-signal
amplifier
BCY70 n-p-n 200 mA −40V 360 mW 150 General-purpose small-signal
amplifier
2N3904 n-p-n 200 mA 40V 310 mW 150 Switching
BF180 n-p-n 20 mA 20V 150 mW 100 RF amplifier
2N3053 n-p-n 700 mA 40V 800 mW 150 Low-frequency amplifier/driver
2N3055 n-p-n 15A 60V 115 W 50 Low-frequency power
Read More Topics
Bipolar junction transistors BJT
Introduction to electromagnetic induction
Force on a current carrying conductor
Magnetic field due to an electric current

Santhakumar Raja

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