Table summarises the characteristics of some typical bipolar junction transistors for different applications, where IC max is the maximum collector current, VCE max is the maximum collector – mitter voltage, PTOT max is the maximum device power dissipation, and hfe is the typical value of common-emitter current gain.
Transistor characteristics and maximum ratings |
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Device |
Type |
IC max |
VCE max |
PTOT max |
hfe typical |
Application |
| BC108 | n-p-n | 100 mA | 20V | 300 mW | 125 | General-purpose small-signal amplifier |
| BCY70 | n-p-n | 200 mA | −40V | 360 mW | 150 | General-purpose small-signal amplifier |
| 2N3904 | n-p-n | 200 mA | 40V | 310 mW | 150 | Switching |
| BF180 | n-p-n | 20 mA | 20V | 150 mW | 100 | RF amplifier |
| 2N3053 | n-p-n | 700 mA | 40V | 800 mW | 150 | Low-frequency amplifier/driver |
| 2N3055 | n-p-n | 15A | 60V | 115 W | 50 | Low-frequency power |
| Read More Topics |
| Bipolar junction transistors BJT |
| Introduction to electromagnetic induction |
| Force on a current carrying conductor |
| Magnetic field due to an electric current |
