Structures for InGaAs APDs – Photodetectors
Structures for InGaAs To improve the performance of structures for InGaAs APDs, various complex device architectures have been devised. One widely used structure is the separate-absorption-and-multiplication (SAM) APD configuration. Image shows, this structure uses different materials in the absorption and multiplication regions, with each region being optimized for a particular function. Here, light enters the
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